No abstract

This paper introduces a technology-specific relation for the static performance of high voltage lateral diffused MOSFETs. A similar relation, only dependent on material properties, is available for vertical power devices. Here we show that the static performance of the lateral power devices is influenced by the REduced SURface Field effect. Hence a technology-specific relation between the breakdown voltage and the specific on-resistance is proposed. The relation is not only material dependent but also involves two technology-dependent parameters. The proposed technology-specific static relation is substantiated by 2D numerical simulations, 1D analytical models and experimental results taken from the literature.

A unipolar accumulation transistor configuration has recently been proposed and experimentally demonstrated. This transistor has a simple structure with Ohmic contacts and only one doping type. The device, termed the accumulation metal oxide semiconductor field effect transistor (AMOSFET), relies on having a nanoscale depth dimension, which forces the current through an accumulated (on state) or depleted (off state) region. Detailed numerical modeling presented here elucidates the previously proposed and experimentally observed AMOSFET features. These include linear and saturation currents which depend on doping rather than gate capacitance, good subthreshold swing behavior, and low threshold voltages. This modeling predicts on-off ratios exceeding 109.