In the present work, the effect of Na doping on optical, structural and electrical properties of Na doped NiO thin films were studied. The spray pneumatic method was used to deposit the Na doped NiO thin films in the range 0 to 5 wt.%, it are investigated at a substrate temperature of 420 °C with NiO solution 0.1 M. Firstly in the XRD specra, as found that a only (111) peak was observed for Na doped NiO thin film indicate that the Na doped NiO thin films a monocrystalline in nature with cubic structure. The maximum crystallite size of Na doped NiO thin films was 18.90 nm at 3 wt.%. Secondary, the optical transmissions spectra Na doped NiO thin films having a high transparency with comparing to undoped film in visible region. The band gap energy was decreased after doping by Na and reaching a minimum value is 3.53 eV at 2 wt.%. The minimum value of Urbach energy was 0.312 eV, it is obtained at 3 wt.%. In the end, the minimum electrical resistance of the Na doped NiO films was located at 5 wt.%. The optimum Na doping amount is achieved at 3 at %.

In the present research, the NiO thin films have been deposited by pneumatic spray method at various substrate temperatures. The main object is to find a good structural, optical and electrical properties of NiO tin films with substrate temperature effected. A set of deposition temperature (380, 400, 420, 440 and 460 °C), the NiO thin film was deposited on glass substrate with 0.1 M. Nanocrystalline films with a polycrystalline cubic crystal with (111) and (200) peaks, it is a strong (111) preferred orientation. The minimum value of grain size G = 16.88 nm was obtained for deposited film at 420 °C. The optical spectra show that the NiO thin films become transparency in visible region, but the film deposited at 460 °C have a high transmission. The band gap energy was located between 3.43 and 3.63 eV, the minimum was obtained for sprayed film at 440 °C. The minima value of Urbach energy was 0.25 eV, it also was found at 440 °C. The electrical property of deposited NiO films at 440 °C has a minimum value of electrical resistivity. The best structure, optical and electrical characterizations of NiO thin films are achieved and begin from deposited temperature of 420 °C.