International audienceWe compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-matched to silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first studied by a tight-binding model modified for nitrogen incorporation in diluted regimes. The critical thicknesses of those alloys are then calculated for various compositions. For the same lattice-mismatch and nitrogen amount, the bandgap of bulk GaAsPN is found to be closer to the targeted gap value of 1.7 eV for high efficiency tandem solar cell. GaPN and GaAsPN epilayers are then grown by molecular beam epitaxy on GaP substrate and studied by photoluminescence and X-ray diffraction. A GaAsPN bulk alloy emitting light at 1.77 eV at room temperature is obtained, demonstrating promising properties for further use in III-V/Si photovoltaic multijunction solar cells
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.