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Cobalt silicide thin films were prepared by spin-coating liquid cyclohexasilane-based inks onto silicon substrates followed by a thermal treatment. The work function of the solution-processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoemission spectroscopy (UPS). Variable frequency C-V of MOS structures with silicon oxide layers of variable thickness showed that solution-processed metal silicide films exhibit a work function of 4.36 eV with one Co-Si film on Si 1 0 0 giving a UPS-derived work function of 4.80 eV. Similar work function measurements were collected for vapor-deposited MOS capacitors where Al thin films were prepared according to standard class 100 cleanroom handling techniques. In both instances, the work function values established by the electrical measurements were lower than those measured by UPS and this difference appears to be a consequence of parasitic series resistance. Semicond. Sci. Technol. 27 (2012) 065012 S S Ullah et al Patterned Al (~250 nm) or Co-Si (~80 nm) gate SiO 2 gate dielectric (~20-250 nm) B-doped p-type Si wafer Al back contact (250 nm)