Interface engineering through passivating agents, in the form of organic molecules, is a powerful strategy to enhance the performance of perovskite solar cells. Despite its pivotal function in the development of a rational device optimization, the actual role played by the incorporation of interfacial modifications and the interface physics therein remains poorly understood. Here, we investigate the interface and device physics, quantifying charge recombination and charge losses in state-of-the-art inverted solar cells with power conversion efficiency beyond 23% - among the highest reported so far - by using multidimensional photoluminescence imaging. By doing that we extract physical parameters such as quasi-Fermi level splitting (QFLS) and Urbach energy enabling us to assess that the main passivation mechanism affects the perovskite/PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) interface rather than surface defects. In this work, by linking optical, electrical measurements and modelling we highlight the benefits of organic passivation, made in this case by phenylethylammonium (PEAI) based cations, in maximising all the photovoltaic figures of merit.
Defect‐mediated recombination losses limit the open‐circuit voltage (VOC) of perovskite solar cells (PSCs), negatively affecting the device's performance. Bulk and dimensional engineering have both been reported as promising strategies to passivate shallow defects, thus improving the photovoltaic conversion efficiency (PCE). Here, a combined bulk and surface treatment employing chlorine‐based compounds is employed. Methylammonium chloride (MACl) is used as a bulk additive, while 4‐methylphenethylammonium chloride (MePEACl) is deposited onto the perovskite surface to produce a low‐dimensional perovskite (LDP) and reduce nonradiative recombination. Through structural and morphological investigations, it can be confirmed that bulk and surface doping have a beneficial effect on the film morphology and its overall quality, while electroluminescence (EL) and photoluminescence (PL) analyses demonstrate an increased and more homogeneous emission. Applying this double passivation strategy in PSC fabrication, a boost is observed in both the short‐circuit current density and the VOC of the devices, achieving a champion 21.4% PCE while improving device stability.
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