Charge transport is investigated in high-mobility n -channel organic fi eld-effect transistors (OFETs) based on poly{[ N , N ′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P(NDI2OD-T2), Polyera ActivInk™ N2200) with variable-temperature electrical measurements and charge-modulation spectroscopy. Results indicate an unusually uniform energetic landscape of sites for charge-carrier transport along the channel of the transistor as the main reason for the observed high-electron mobility. Consistent with a lateral fi eld-independent transport at temperatures down to 10 K, the reorganization energy is proposed to play an important role in determining the activation energy for the mobility. Quantum chemical calculations, which show an effi cient electronic coupling between adjacent units and a reorganization energy of a few hundred meV, are consistent with these fi ndings.

Field‐effect transistors based on conjugated polymers are being developed for large‐area electronic applications on flexible substrates, but they also provide a very useful tool to probe the charge transport physics of these complex materials. In this review we discuss recent progress in polymer semiconductor materials, which have brought the performance and mobility of polymer devices to levels comparable to that of small‐molecule organic semiconductors. These new materials have also enabled deeper insight into the charge transport physics of high‐mobility polymer semiconductors gained from experiments with high charge carrier concentration and better molecular‐scale understanding of the electronic structure at the semiconductor/dielectric interface.

Here we report the use of pulse radiolysis and spectroelectrochemistry to generate low-valent nickel intermediates relevant to synthetically important Ni-catalyzed cross-coupling reactions and interrogate their reactivities toward comproportionation and oxidative addition processes. Pulse radiolysis provided a direct means to generate singly reduced [(dtbbpy)­NiBr], enabling the identification of a rapid Ni(0)/Ni­(II) comproportionation process taking place under synthetically relevant electrolysis conditions. This approach also permitted the direct measurement of Ni­(I) oxidative addition rates with electronically differentiated aryl iodide electrophiles (k OA = 1.3 × 104–2.4 × 105 M–1 s–1), an elementary organometallic step often proposed in nickel-catalyzed cross-coupling reactions. Together, these results hold implications for a number of Ni-catalyzed cross-coupling processes.

Understanding the electronic structure of organic-organic heterointerfaces is crucial for many device applications of organic semiconductors. Here we have developed a simple analytical model to describe the effect of static dipolar disorder in a polymer dielectric on the density of states of an adjacent organic semiconductor. The degree of energetic disorder varies strongly with distance from the interface. Using a simple mobility model, we have been able to explain quantitatively both the magnitude as well as the gate voltage dependence of the field-effect mobility for polymer gate dielectrics with different dielectric constants.

The emission characteristics and external quantum efficiencies of ambipolar polymer light-emitting field-effect transistors are investigated as a function of applied voltage, current density, and ratio of hole to electron mobility. Green-emitting poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) with balanced electron and hole mobilities and red-emitting poly((9,9-dioctylfluorene)-2,7- diyl-alt-[4,7-bis(3-hexylthien-5-yl)-2,1,3-benzothiadiazole]-2′,2″-diyl) (F8TBT) with strongly unbalanced hole and electron mobilities as semiconducting and emissive polymers are compared. The current-voltage and light output characteristics of the two types of light-emitting transistors were found to be fundamentally alike independent of mobility ratio. Device modeling allowing for a single (Langevin-type) charge recombination mechanism was able to reproduce the device characteristics for both cases but could not replicate the experimentally observed dependence of external quantum efficiency on current density. The increase of quantum efficiency with current density up to a saturation value could be indicative of a trap-assisted nonradiative decay mechanism at the semiconductor-dielectric interface. Optical output modeling confirmed that the maximum external quantum efficiency of F8BT light-emitting transistors of 0.8% is consistent with complete recombination of all charges and a singlet exciton fraction of 25%.