We report the one-pot synthesis of colloidal Mn-doped cesium lead halide (CsPbX 3 ) perovskite nanocrystals and efficient intraparticle energy transfer between the exciton and dopant ions resulting in intense sensitized Mn luminescence. Mn-doped CsPbCl 3 and CsPb(Cl/Br) 3 nanocrystals maintained the same lattice structure and crystallinity as their undoped counterparts with nearly identical lattice parameters at ∼0.2% doping concentrations and no signature of phase separation. The strong sensitized luminescence from d−d transition of Mn 2+ ions upon band-edge excitation of the CsPbX 3 host is indicative of sufficiently strong exchange coupling between the charge carriers of the host and dopant d electrons mediating the energy transfer, essential for obtaining unique properties of magnetically doped quantum dots. Highly homogeneous spectral characteristics of Mn luminescence from an ensemble of Mn-doped CsPbX 3 nanocrystals and well-defined electron paramagnetic resonance spectra of Mn 2+ in host CsPbX 3 nanocrystal lattices suggest relatively uniform doping sites, likely from substitutional doping at Pb 2+ . These observations indicate that CsPbX 3 nanocrystals, possessing many superior optical and electronic characteristics, can be utilized as a new platform for magnetically doped quantum dots expanding the range of optical, electronic, and magnetic functionality.

The conversion of optical power to an electric potential is of general interest for energy applications and is typically obtained via optical excitation of semiconductor materials. We developed a method for achieving electric potential that uses an all-metal geometry based on the plasmon resonance in metal nanostructures. In arrays of gold nanoparticles on an indium tin oxide substrate and arrays of 100-nanometer-diameter holes in 20-nanometer-thick gold films on a glass substrate, we detected negative and positive surface potentials during monochromatic irradiation at wavelengths below or above the plasmon resonance, respectively. We observed plasmoelectric surface potentials as large as 100 millivolts under illumination of 100 milliwatts per square centimeter. Plasmoelectric devices may enable the development of all-metal optoelectronic devices that can convert light into electrical energy.

We report a 100000-fold increase in the conductance of individual CdSe nanorods when they are electrically contacted via direct solution phase growth of Au tips on the nanorod ends. Ensemble UV-vis and X-ray photoelectron spectroscopies indicate this enhancement does not result from alloying of the nanorod. Rather, low temperature tunneling and high temperature (250-400 K) thermionic emission across the junction at the Au contact reveal a 75% lower interface barrier to conduction compared to a control sample. We correlate this barrier lowering with the electronic structure at the Au-CdSe interface. Our results emphasize the importance of a nanocrystal surface structure for robust device performance and the advantage of this contact method.