In order to better understand the transition from quantum to classical behavior in spin system, electron magnetic resonance (EMR) is studied in suspensions of superparamagnetic magnetite nanoparticles with an average diameter of ~ 9 nm and analyzed in comparison with the results obtained in the maghemite particles of smaller size (~ 5 nm). It is shown that both types of particles demonstrate common EMR behavior, including special features such as the temperature-dependent narrow spectral component and multiple-quantum transitions. These features are common for small quantum systems and not expected in classical case. The relative intensity of these signals rapidly decreases with cooling or increase of particle size, marking gradual transition to the classical FMR behavior.

Lasley-Hunter, B.; Hunter, D.; Noginov, Maxim; Dadson, J.B.; Zhang, K.; Rakhimov, Rakhim R.; Pradhan, Aswini K.; Zhang, Jun; and Sellmyer, David J., "Ferromagnetic resonance studies in ZnMnO dilute ferromagnetic semiconductors" (2006). David Sellmyer Publications. 7.

Ferromagnetic resonance (FMR) in the dependence on magnetic field orientation, and effect of the laser light on the magnetic ordering were studied in colossal magnetoresistance films, La1−xSrxMnO3 and La1−xBaxMnO3. The FMR linewidth increased with the decrease in temperature in La1−xSrxMnO3 films, and was nearly temperature independent in La1−xBaxMnO3, that was attributed to the different degree of magnetic homogeneity of the films. Layered structures La1−xBaxMnO3 on silicon with intermediate layer of SrTiO3 were characterized by FMR as highly homogeneous. From the orientation and temperature dependences of the FMR spectra, the effective magnetization, and effective anisotropy fields were estimated. The laser light illumination resulted in the change of FMR line shape and intensity, and was interpreted in terms of optically induced magnetic disordering and effective heating of the spin system.

We describe the deposition of insulating tantalum oxide thin films under conditions of controlled ion bombardment, which can be achieved using reactive sputtering on 90° off-axis substrates with an applied substrate bias. Capacitive measurements of Ta2O5 deposited on unbiased off-axis substrates indicate low frequency dielectric constants as high as εr∼300. Low frequency loss tangents are high, tan δ>0.5, and have a pronounced frequency dependence. Deposition of the film off-axis with sufficient applied rf bias to the substrate (negative bias >−70 V) recovers the on-axis properties typical of Ta2O5, e.g., εr∼22 and tan δ∼0.02. The recovery of normal dielectric behavior is attributed to the ion bombardment of the growing film under substrate bias, similar to on-axis depositions but absent from depositions on off-axis substrates with no applied substrate bias. We suggest that insufficiently bombarded films develop a Maxwell–Wagner type polarization along columnar voids. The void structure and the associated dielectric response vary with distance from the sputtering source due to variations in ion density and angle from the sputtering source. A similar dielectric response is observed in depositions on on-axis substrates as a function of angle from the central sputter gun axis. Our results suggest that ion bombardment is necessary for good quality sputtered dielectric films but that a controlled Ar+ flux is essentially equivalent to the uncontrolled O2−/O2− flux of on-axis reactive sputtering.

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