A 1-MeV neutron damage equivalence methodology and damage function have been developed for GaAs based on a recoil-energy dependent damage efficiency and the displacement kerma. This method, developed using lifetime degradation in GaAs LEDs in a variety of neutron spectra, is also shown to be applicable to carrier removal. A validated methodology, such as this, is required to ensure and evaluate simulation fidelity in the neutron testing of GaAs semiconductors.

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