This work, based on the junction recombination velocity (Sfu) concept, is used to study the solar cell's electric power at any real operating point. Using Sfu and the back side recombination velocity (Sbu) in a 3D modelling study, the continuity equation is resolved. We determined the photocurrent density, the photovoltage and the solar cell's electric power which is a calibrated function of the junction recombination velocity (Sfu). Plots of solar cell's electric power with the junction recombination velocity give the maximum solar cell's electric power, Pm. Influence of various parameters such as grain size (g), grain boundaries recombination velocity (Sgb), wavelength (λ) and for different illumination modes on the solar cell's electric power is studied.
Numerical simulations have shown that low reflectivity’s at the surface of the planar cell coated with a single layer can be obtained. For example, for single coatings of Si3N4 and HfO2 materials, reflectivity values of around 3% and 2% respectively are obtained. Structures with multilayer coatings such as MgF2 /SiNx: H/Si, give a very low reflectivity of around 1%. Thus, the refractive index of the coating is an important parameter that plays a major role in the optical properties of the materials. The closer the refractive index is to the index of the substrate or the layer above the substrate, the higher the reflectivity. The low reflectivity’s of silicon coated with anti-reflective materials increase the external quantum efficiency of the solar cell; for example, the efficiency is 95% for HfO2 /Si and Si3N4 /Si, as there is a maximum incident photon flux within the solar cell.
A three-dimensional modeling study of a polycrystalline silicon mono-facet photocell under multi-spectral illumination is presented highlighting the effect of irradiation energy (Φ) and damage coefficient (Kl) on the macroscopic parameters. Using the junction recombination rate Sf and the backside recombination rate (Sb) in a 3D modeling study, the continuity equation is solved. We determined the current density the current density and the photovoltage. This study takes into account the irradiation energy and the damage coefficient on the quality of the polycrystalline silicon photocell.
This paper focuses on anti-reflective coatings on monocrystalline silicon solar cells and the impact of front surface texturing. The reference wavelength of silicon is =700 nm, with its optimum refractive index (n = 3.7838) and a surface reflectivity of 33%. The calculations were made on the basis of layer thickness values and refractive indices that allow the phase and amplitude conditions chosen to be respected, namely (MgF2) (SiOxNy), (SiOx), and (SiNx:H). Numerical simulations have shown low reflectivitys at the surface of the planar cell coated with a single layer, but texturing on this same alloy allows a significant reduction in reflectivity. However, the comparison of the results of silicon coated with a simple anti-reflection layer on a plane surface and the textured one gives us important differences such as: 7,05% for MgF2 /Si, 4,6% SiOx/Si, 0,6% for SiOxNy/Si and 0,4% for SiNx:H/Si.
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