This paper comprises of, designing and analysis of novel 3D Gate All Around Cylindrical tunnel field effect transistor (TFET). The device designing incorporates hetero-substrate (HeS) material with inclusion of etched drain (ED) and elevated density strip (EDS) at source-to-channel junction for reduction in tunneling barrier width resulting in better ON-current (ION). For analysis purpose of device, investigation is carried out in terms of drain current profile, subthreshold swing (SS) and parasitic capacitances. The device has been recorded with steepest SS=35mV/Dec, robust OFF-current (IOFF)=1.51X10−19 A/µm, high ION=1.52X10−5 A/µm. Designing and analysis of the proffered structure has been executed using Technology Computer-Aided Design (TCAD) 3D device computation software.

The idea of a buried oxide layer (BOx) in a split channel Gate All Around-Tunnel Field Effect Transistor (GAA-TFET) was investigated in this paper. This work examined the impact of buried oxide layer on the device's performance. With the BOx layer present and channel length of 20nm, the channel area of the TFET device investigated in this study is divided equally on the same side. The doping concentration has been transferred to the split channel on the drain side. The device’s performance was examined using numerical simulation utilizing simulation software of CAD devices. The final results which incorporate the buried oxide layer were being compared to the uniform split channel GAA-TFET. The parameters like ON current (Ion),OFF current (Ioff), subthreshold swing (SS) and electric-field (E) intensity are observed and compared with silicon (Si) based GAA-TFET and Indium phosphide (InP) based GAA-TFET. It is found that InP based GAA-TFET with buried oxide layer is more advanced device design than the others with Ion and Ioff of 3.02 x 10-05 A/um and 2.09 x 10-22 A/um, respectively.

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For some time now, the advancement of low power and high sensitivity biosensors has been the center of attention for in-situ detection and monitoring which form an integral part of portable health monitoring systems. This paper elucidates the design-optimization of a cylindrical (cyl.) gate all around (GAA) tunnel field effect transistor (TFET) biosensor with retrograde doping using numerical modeling. The device consists of n+ heavily doped SiGe substrate and two insulated gates i.e. primary gate (PrG) and biasing gate (BG) with suitable work functions. Sensitivity of the biosensor is investigated by varying dielectric constant (k) and charge density (ρ) in the active region of device. TFET biosensor design and simulation is performed using TCAD Synopsys software. Computations are carried out for various conditions of dielectric constant (k) and charge density (ρ) for analyzing the sensor sensitivity. Simulation results show that for k=10 and ρ = 3.0x1012cm−2, there is low leakage current (IOFF) = 1.0x10−16A/µm, and high ON current (ION) = 1.0x10−6 A/µm. Results obtained in this work as useful as it will act as a design guideline for developing TFET biosensors for various biological applications.