This paper presents a detailed study of theoretical performance of graphene field effect transistor (GFET) using analytical approach. GFET shows promising performance in terms of faster saturation as well as extremely high cutoff frequency (3.9[Formula: see text]THz). A significant shift of the Dirac point as well as an asymmetrical ambipolar behavior is observed on the transfer characteristics. Similarly, an approximate symmetrical capacitance–voltage (C–V) characteristics is obtained where it has guaranteed the consistency because it shows a significant saturation both in the accumulation and inversion region. In addition, a high transconductance of 6800[Formula: see text]uS at small channel length (20[Formula: see text]nm) along with high cutoff frequency (3.9[Formula: see text]THz) has been observed which demands for high speed field effect devices.

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