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The deposition of aluminium from a chloroaluminate based ionic liquid was studied to elucidate the effect of a diluent (toluene) and electrolyte (LiCl) on the deposit morphology. A wide variety of analytical techniques was applied to this system to determine the speciation and mechanism of material growth. These included: (27)Al NMR, FAB-MS, cyclic voltammetry, chronocoulometry, chronopotentiometry, scanning electron microscopy and atomic force microscopy. It was found that under-potential deposition (upd) causes a change in the way in which metal grows on the electrode surface. Metal grows in two regimes which are believed to be nano-material and bulk material. The addition of toluene causes a change in speciation and a decrease in upd which in turn changes the morphology of the deposit obtained and can lead to mirror finish aluminium. The addition of LiCl has the opposite effect encouraging upd and leading to larger crystallites and a dark grey deposit. It is also shown for the first time that under many conditions the rate of the anodic dissolution process is overall rate controlling and one effect of the addition of toluene is to increase the rate of anodic dissolution.

Researchers are currently showing interest in molybdenum disulfide (MoS2)-based solar cells due to their remarkable semiconducting characteristics. The incompatibility of the band structures at the BSF/absorber and absorber/buffer interfaces, as well as carrier recombination at the rear and front metal contacts, prevents the expected result from being achieved. The main purpose of this work is to enhance the performance of the newly proposed Al/ITO/TiO2/MoS2/In2Te3/Ni solar cell and investigate the impacts of the In2Te3 BSF and TiO2 buffer layer on the performance parameters of open-circuit voltage (V OC), short-circuit current density (J SC), fill factor (FF), and power conversion efficiency (PCE). This research has been performed by utilizing SCAPS simulation software. The performance parameters such as variation of thickness, carrier concentration, the bulk defect concentration of each layer, interface defect, operating temperature, capacitance–voltage (C–V), surface recombination velocity, and front as well as rear electrodes have been analyzed to achieve a better performance. This device performs exceptionally well at lower carrier concentrations (1 × 1016 cm–3) in a thin (800 nm) MoS2 absorber layer. The PCE, V OC, J SC, and FF values of the Al/ITO/TiO2/MoS2/Ni reference cell have been estimated to be 22.30%, 0.793 V, 30.89 mA/cm2, and 80.62% respectively, while the PCE, V OC, J SC, and FF values have been determined to be 33.32%, 1.084 V, 37.22 mA/cm2, and 82.58% for the Al/ITO/TiO2/MoS2/In2Te3/Ni proposed solar cell by introducing In2Te3 between the absorber (MoS2) and the rear electrode (Ni). The proposed research may give an insight and a feasible way to realize a cost-effective MoS2-based thin-film solar cell.