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Electronic and optical properties of Silicon Nanowire (SiNW) obtained from theoretical studies and experimental approaches have been reviewed. The diameter dependency of bandgap and effective mass of SiNW for various terminations have been presented. Optical absorption of SiNW and nanocone has been compared for different angle of incidences. SiNW shows greater absorption with large range of wavelength and higher range of angle of incidence. Reflectance of SiNW is less than 5% over majority of the spectrum from the UV to near IR region. Thereafter, a brief description of the different growth techniques of SiNW is given. The advantages and disadvantages of the different catalyst materials for SiNW growth are discussed at length. Furthermore, three thermodynamic aspects of SiNW growth via the vapor–liquid–solid mechanism are presented and discussed.

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We report ∼12, 5, 12, 100, and 70 times enhancement of external quantum efficiency, detectivity, responsivity, AC conductivity, and overall dielectric constant (ε′), respectively of hybrid silicon nanowires (SiNWs) and titania (TiO2) nanoparticles (NPs) device as compared to SiNWs only device. Devices show persistent photoconductivity. Metal assisted chemical etching and co-precipitation method were used to prepare SiNWs (length ∼40 μm, diameter ∼30–400 nm) and TiO2 NPs (diameter ∼50 nm), respectively. Formation of acceptor like states at NPs and SiNWs interface improves electrical properties. Presence of low refractive index TiO2 around SiNWs causing funneling of photon energy into SiNWs improves photodetection.