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In the present paper, a high electron mobility transistor based on β-Gα2O3 material (BGO-HEMT) with different dielectrics (Si3N4, Al2O3, and HfO2) at the interface of aluminum nitride (AlN) and the gate is demonstrated. The device has a 10nm AlN layer with 50 nm barrier width, 50nm gate-length, and a value of 5 nm as gate-to-barrier thickness.A highly doped n+ material with a wider gap in between ohmic contact-barrier layers reveals the proposed device's novel traits. The performance is computd in terms of transfer characteristic, transconductance, gate capacitance, 2nd, and 3rd order transconductance values. The proposed structure reduced the dynamic & access resistance and provided a high gm value equal to 0.15S/µm,drain current density value of 650 A/mm (maximum) at Vds= 5 V. In the future, the proposed device can be utilized in high power radio frequency and microwave applications.

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