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CdTe Nano-rods have been synthesized using Hydrothermal method. For the confirmation of formation of CdTe in nano metric dimension XRD technique is employed. The diameter of CdTe nano-rods is calculated to be 35.04 nm. SEM image reveals that nano CdTe possess rod shaped morphology. The compositional data is collected with EDAX spectra. Successful capping of thioglycolic acid (TGA) on the surface of CdTe nano-rods is well endorsed by FTIR spectroscpoy technique. Band gap is calculated to be 1.65eV from UV-Visible absorption spectra. I-V characteristics of the CdTe nano-rods showed a linear symmetrical variation at room temperature. This was due to the high crystallinity and homogeneous powder sample of CdTe nano-rods. The higher value of mobility of the order of 1.1264 X 103 cm2/V-s of the as synthesized CdTe nano-rods reveals moderate grain boundaries and less structural defects. Hence compared to bulk CdTe, nano-structured CdTe materials are more ordered in structure and hence improved crystallinity. Room temperature Hall meaasurement employing Van Der Pauw method indicates high resistivity of the order of 107 Ω cm and the as synthesized nano-rods are of p-type material.

Current (I)-Voltage (V) characterizations of a CdTe quantum dot diode is discussed in this article. The quantum dot diode is fabricated by a simple drop casting method on an n-type Indium Tin Oxide glass substrate. The linear variation of current with respect to applied voltage can be attributed to reduced grain boundary defects and enriched crystallinity. It is also observed that quantum dots can show good current conduction than CdTe nano-rods.