This study has presented the different suggested compounds based (CAWG) like silicon dioxide (SiO2), lithium niobate (LiNbO3) and gallium aluminum arsenide (Ga(1-x)Al(x)As) taking into consideration their operating wavelength range, their operating temperature range, their physical properties, and also their ability to be used in the manufacture of optical devices. The optimum performance was given in case of using the following materials such as SiO2, LiNbO3 and Ga(1-x)Al(x)As materials, so these materials have been used as a proposed materials based CAWG devices, which have been investigated for high stability and low insertion loss in near infrared wavelength band. The comparison between these proposed materials are clarified through the design parameters of CAWG device such as the order of diffraction (m), path length adjacent waveguides difference (ΔL), focal length (L f ), free spectral range (FSR), max no. of I/O wavelength channels (N max), and arrayed waveguides (P) number.

This study reported the performance evaluation and simulation of passive optical networks for high transmission rates up to 10 Gb/s for possible distance up to 50 km. Laser rate equations, directly modulated laser measured and vertical cavity surface emitting laser (VCSEL) are employed for the measurement of the network performance. Different bit sequences are suggested to show the network performance parameters with various proposed optical sources. Optical and electrical powers are measured for 50 km network reach. In addition to max. Q factor is also measured for various optical sources and bits sequence variations. Laser rate equations are employed in this network to upgrade the Q factor criteria for maximum network reach of 100 km in the downstream direction.