We investigate the resistive switching behavior of Ba-doped BiFeO3 (BBFO) films grown on single crystalline SrTi0.99Nb0.01O3 substrates. Observation of diode like I-V behavior and reduction in VC with Ba-content in BBFO films have been understood in the context of modifications in its energy band diagram. Also, I-V curves exhibit hysteresis which has been explained on the basis of migration and recombination of oxygen vacancies under field conditions. Furthermore, increment in Ba-content improves the retention property and ON/OFF switching ratio in BFO films which makes them suitable for applications in switching devices.

The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adom.201900958. 2−y 2 , d z 2 ) levels. [35] The splitting of the d-orbital was successfully explained by the crystal field theory. The ground state properties of these materials are mainly governed by the two interactions; i) the electron correlations (U) and, ii) SOC (λ) in the crystal field split narrow bands. [36] Among d electron systems, electrons in 3d TMOs experiences large electron correlations due to localized nature of 3d orbitals. The idea of electron-electron interaction was given by Sir N. F. Mott in 1949. It originated from the fact that the NiO was expected to be a metal according to the band theory, while the experiments showed insulating behavior. [37][38][39][40][41] This disagreement of experiments with the theory was explained by Hubbard who attributed the insulating state to the splitting

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Electronic properties of manganites are significantly important for various spintronic applications such as microelectronics, magnetic data storage, communication technologies, and memory devices. Influence of applied electric field on the room temperature charge transport in ZnO/La0.7Sr0.3MnO3/SrNb0.002Ti0.998O3 (SNTO) heterostructure has been investigated using field effect studies. Large negative and positive electroresistance has been observed in heterostructure under various possible circuit geometries. Field effect studies have been carried out using three different circuit geometries, namely: (i) ZnO as a control electrode (ELZ), (ii) SNTO as a control electrode (ELS), and (iii) shorted ZnO and SNTO as control electrodes (ELZS). For this, channel electric field (ECH) dependent variation in channel resistance (RC) (of manganite channel) and I-V (across manganite channel) under various control fields (EC) have been studied. Variation in barrier height (ΦB) with control field (EC) for different geometries has been discussed.

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