The feasibility to generate powerful monochromatic radiation of the undulator type in the gamma region of the spectrum by means of planar channeling of ultrarelativistic electrons in a periodically bent crystal is proven. It is shown that to overcome the restriction due to the smallness of the dechanneling length, an electron-based crystalline undulator must operate in the regime of higher beam energies than a positron-based one does. A numerical analysis is performed for a 50 GeV electron channeling in Si along the (111) crystallographic planes.

Abstract. We discuss the features of a crystalline undulator of the novel type based on the effect of a planar channeling of ultra-relativistic electrons in a periodically bent crystals. It is demonstrated that an electron-based undulator is feasible in the tens of GeV range of the beam energies, which is noticeably higher than the energy interval allowed in a positron-based undulator. Numerical analysis of the main parameters of the undulator as well as the characteristics of the emitted undulator radiation is carried out for 20 and 50 GeV electrons channeling in diamond and silicon crystals along the (111) crystallographic planes.

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The coherent and non-coherent scattering effects on "backward" parametric X-ray radiation by relativistic electrons in a crystal on the basis of the method of functional integration is investigated. A comparison of contributions of these effects to parametric X-ray radiation line width has been considered. It is shown that in a number of cases the major contribution to the line width of parametric X-ray radiation is made by non-coherent multiple scattering.