The presence of two-dimensional (2D) layerstacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS 3 /Fe 3 GeTe 2 when the temperature is below the Neel temperature of MnPS 3 . Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS 3 /Fe 3 GeTe 2 heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of Fe 3 GeTe 2 during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.

Topological Hall effect (THE) has been used as a powerful tool to unlock spin chirality in novel magnetic materials. Recent focus has been widely paid to THE and possible chiral spin textures in two-dimensional (2D) layered magnetic materials. However, the room-temperature THE has been barely reported in 2D materials, which hinders its practical applications in 2D spintronics. In this paper, we report a possible THE signal featuring antisymmetric peaks in a wide temperature window up to 320 K in Cr 1.2 Te 2 , a new quasi-2D ferromagnetic material. The temperature, thickness, and magnetic field dependences of the THE lead to potential spin chirality origin that is associated with the spin canting under external magnetic fields. Our work holds promise for practical applications in future chiral spin-based vdW spintronic devices.

van der Waals crystals exhibit excellent material performance when exfoliated to few-atomic-layer thickness. In contrast, the van der Waals thin films more than 10 nm thick are believed to show bulk properties, in which outstanding material performance is rarely found. Here we report the largest anomalous Hall conductivity observed so far in a 170 nm van der Waals ferromagnetic 1T-CrTe2 flake, which reaches 67,000 Ω–1 cm–1. Such a colossal anomalous Hall conductivity in 1T-CrTe2 is dominated by the extrinsic skew scattering process rather than the intrinsic Berry phase effect, as evidenced by the linear relation between the anomalous Hall conductivity and the longitudinal conductivity. Defying the dilemma of mutually exclusive large anomalous Hall angle and high electric conductivity for most ferromagnets, 1T-CrTe2 achieves both in a thin film sample. Considering the shared physics of the anomalous Hall effect and the spin Hall effect, our finding offers a guideline for searching large spin Hall materials of high conductivity which may overcome the bottleneck of overheating in spintronics devices.