Nanocrystalline SnO 2 particles have been synthesized by a simple sol-gel method. The structural and optical properties of these SnO 2 particles are investigated using X-ray powder diffraction, transmission electron microscopy, UV-visible absorption, and photoluminescence spectroscopy. The oxygen-vacancies-related photoluminescence of pure, cerium-, and manganese-doped SnO 2 nanoparticles was systematically investigated. The origin of the luminescence is assigned to the recombination of electrons in a conduction band with holes in the V o •• center. Experimental results reveal that increasing calcining temperature can decrease the oxygenvacancies-related luminescence intensity of the sample. After introducing Ce 3+ /Mn 2+ ions into the host, the oxygen-vacancies-related luminescence has been enhanced remarkably resulting from the formation of many more oxygen vacancies. The dependence of the oxygen-vacancies-related luminescence intensity on the Ce 3+ / Mn 2+ concentration is also discussed.
We have controllably modulated the drain current (I(D)) and threshold voltage (V(T)) in pseudo metal-oxide-semiconductor field-effect transistors (MOSFETs) by grafting a monolayer of molecules atop oxide-free H-passivated silicon surfaces. An electronically controlled series of molecules, from strong pi-electron donors to strong pi-electron acceptors, was covalently attached onto the channel region of the transistors. The device conductance was thus systematically tuned in accordance with the electron-donating ability of the grafted molecules, which is attributed to the charge transfer between the device channel and the molecules. This surface grafting protocol might serve as a useful method for controlling electronic characteristics in small silicon devices at future technology nodes.
The optical and photophysical properties of phenylacetylene dendritic macromolecules based on unsymmetrical branching are investigated using steady-state and time-dependent spectroscopy. Monodendrons, up to the fourth generation, are characterized with and without a fluorescent perylene trap at the core. The higher generation monodendrons without the perylene trap exhibit high molar extinction coefficients (>10(5) M(-1) cm(-1)) and high fluorescence quantum yields (65-81%). When a perylene trap is placed at the core, then the monodendrons typically exhibit high energy transfer quantum yields (approximately 90%), as well as subpicosecond time scale excited-state dynamics, as evidenced by ultrafast pump-probe measurements. The photophysical properties of the unsymmetrical monodendrons are compared to those of phenylacetylene monodendrons with symmetrical branching, which have been described recently. The high fluorescence quantum yields and large energy transfer quantum efficiencies exhibited by the unsymmetrical monodendrons suggest they have potential for applications in molecular-based photonics devices.
Electronic structures at the silicon/molecule interface were studied by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, inverse photoemission spectroscopy, and Kelvin probe techniques. The heterojunctions were fabricated by direct covalent grafting of a series of molecules (-C6H4-X, with X = NMe2, NH2, NO2, and Mo6 oxide cluster) onto the surface of four types of silicon substrates (both n- and p-type with different dopant densities). The electronic structures at the interfaces were thus systematically tuned in accordance with the electron-donating ability, redox capability, and/or dipole moment of the grafted molecules. The work function of each grafted surface is determined by a combination of the surface band bending and electron affinity. The surface band bending is dependent on the charge transfer between the silicon substrate and the grafted molecules, whereas electron affinity is dependent on the dipole moment of the grafted molecules. The contribution of each to the work function can be separated by a combination of the aforementioned analytical techniques. In addition, because of the relatively low molecular coverage on the surface, the contribution from the unreacted H-terminated surface to the work function was considered. The charge-transfer barrier of silicon substrates attached to different molecules exhibits a trend analogous to surface band bending effects, whereas the surface potential step exhibits properties analogous to electron affinity effects. These results provide a foundation for the utilization of organic molecule surface grafting as a means to tune the electronic properties of semiconductors and, consequently, to achieve controllable modulation of electronic characteristics in small semiconductor devices at future technology nodes.
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