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Cu–K co‐doped NiO films (Ni1–2xCuxKxO and x = 0–0.05) are deposited on common glass substrates by the spin‐coating sol–gel method. The phase and the morphological, optical, and electrical properties of NiO films as a function of the Cu–K co‐doping concentration are explored by X‐ray diffraction, scanning electron microscopy, and ultraviolet–visible spectrophotometer and Hall effect measurement systems, respectively. All the films are pure phases of the cubic rock‐salt structure. As the doping concentration increases, the preferred orientation of the Ni1–2xCuxKxO films changes from (200) to (111). Moreover, the surface morphologies of the films are obviously affected by the Cu–K co‐doping concentration. The absorption coefficients of the Cu–K co‐doped NiO films are relatively higher than that of the undoped film on the whole in the visible region except x = 0.02. With the increase in doping concentration, the resistivity of the films decreases on the whole. Finally, the figures of merit (FOM) of the films are considered, and the maximum FOM of the films is achieved at x = 0.02.

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The sol-gel method based on the rapid pyrolysis process was adopted to prepare Ni 1−x Cu x O (x = 0-0.1) films on glass substrates. The effects of Cu doping on the structural, morphological, electrical and optical properties of the films were characterised by X-ray diffractometer, scanning electron microscope, Hall effect instrument and ultraviolet-visible spectrophotometer, respectively. The NiO-based films have a cubic rock salt structure and it was found that the film with x = 0.06 should have minimal residual stress. The transmittance and bandgap of the films decreased with increasing Cu-doping concentration. In addition, the compactness of the films increased along with the increase of Cu-doping concentration as a whole. The carrier concentration of the films was almost invariable, but the carrier mobility was determined by the competition between the effects of the morphology and the ionised impurity scattering. The resistivity of the films first decreases and then increases, and the minimum resistivity was 182.1 Ω cm at x = 0.06.