Ultrafast all-optical switches based on epsilon-near-zero (ENZ)-enhanced nonlinear refraction in transparent conducting oxides have achieved exciting results in realizing large absolute modulations. However, broad-band, polarization-independent, and wide-angle ultrafast all-optical switches have been challenging to produce, due to the inherent narrow band, polarization-dependent, and angle-dependent characteristics of the ENZ effect. To this end, we propose an ultrafast all-optical switch based on the enhanced nonlinear absorption of corrugated indium tin oxide (ITO) thin films. Taking advantage of the perfect absorption and localized field enhancement of the ENZ and localized surface plasmon resonance modes, we significantly enhanced the nonlinear absorption of the corrugated ITO film in the 1450–1650 nm telecom band. The experimental results show that the nonlinear saturable absorption coefficient of the corrugated ITO film at 1450 nm was as high as −1.5 × 105 cm GW–1, enabling all-optical switching to obtain an extinction ratio of 14.32 dB and an ultrafast switching time of 350 fs at a pump fluence of 18.51 mJ cm–2. Furthermore, the all-optical switch achieved an extinction ratio of over 15 dB and an insertion loss of approximately 2.6 dB within the 200 nm absorption band and exhibited polarization-independent and wide-angle features. The ultrafast temporal response can be attributed to intraband transient bleaching of the corrugated ITO film. Our findings demonstrate that corrugated ENZ films can overcome the inherent narrow-band, polarization-dependent, and angle-dependent problems of natural ENZ materials without increasing the response time, making them a potential ENZ ultrafast all-optical switching material platform.

As a newly-developed two-dimensional (2D) material of group-IVA, few-layer silicon (Si) nanosheets were prepared by the liquid phase exfoliation (LPE) method. Its non-linear saturable adsorption property was investigated by 532 and 1064 nm nanosecond lasers. Using Si nanosheets as the saturable absorber (SA), passive Q-switched all-solid-state lasers were demonstrated for the first time. For different laser emissions of Nd3+ at 0.9, 1.06, and 1.34 µm, the narrowest Q-switched pulse widths were 200.2, 103.7, and 110.4 ns, corresponding to the highest peak powers of 2.76, 2.15, and 1.26 W. The results provide a promising SA for solid-state pulsed lasers and broaden the potential application range of Si nanosheets in ultrafast photonics and optoelectronics.

As the cousins of graphene, i.e. same group IVA element, the nonlinear absorption (NLA) properties of silicene nanosheets were rarely studied. In this paper, we successfully exfoliated the two-dimensional silicene nanosheets from bulk silicon crystal using liquid phase exfoliation method. The NLA properties of silicene nanosheets were systemically investigated for the first time, as we have known. Silicene performed exciting saturable absorption and two photon absorption (2PA) behavior. The lower saturable intensity and larger 2PA coefficient at 532 nm excitation indicates that silicene has potential application in ultrafast lasers and optical limiting devices, especially in visible waveband.