Highly textured Zn 0.2 Ni 0.8 Mn 2 O 4 (ZNM) thin films were prepared on Si(100) substrates through RF magnetron sputtering under different annealing temperatures. The effects of annealing temperature on the microstructure and electrical properties of ZNM thin films were investigated. The mechanism of highly textured ZNM spinel film formation was discussed.
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