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Calibrated simulations are used to study a dielectric modulated, electrically doped, dual metal gate, SiGe heterojunction, double gate TFET biosensor in this work. Use of lower bandgap SiGe at the source side helps in improving the ON current of the biosensor. Electric doping is preferred over physical doping to overcome the random dopant fluctuations and high thermal budget problems. Non-ideal situations having partially and non-uniformly filled cavity regions are analyzed in this work. Partially filled cavity has fill factor less than 100% and is studied by considering 50%, 20%, and 10% fill factors. Different positions of biomolecules inside a partially filled cavity are also studied through extensive simulations and are found to affect the sensitivity largely. Four different non-uniform profiles, decreasing, increasing, convex and concave, are created in the cavity region and their sensitivity values are compared for different dielectric constants ( k ) and charge densities ( ). Among the different non-uniform profiles considered, maximum sensitivity is obtained for decreasing profile and it improves with an increase in dielectric constant and positive charge density while it decreases when negative charge density increases.

The present work focuses on investigating the performance of PGP-SELBOX NCFET (partial ground plane selective buried oxide negative capacitance FET) electrical properties at high temperatures. The performance of the device has been studied between the temperature of 300–400 K using the Landau–Khalatnikov equation with the Poisson’s equation. In NCFET, ferroelectric material in the gate stack generates negative capacitance effect that enhances the device performance by the voltage amplification process. Doped HFO2 is used as the ferroelectric material because of its high dielectric capacitance and reliable polarization rate. This work primarily focuses on examining the effects of temperature change on the device’s dc performance metrics, analog/RF performance parameters, and linearity performance parameters. Compared to kT/q, subthreshold slope (SS) rises more rapidly as temperature rises and diminishing the ferroelectric effect after 350 K. Also reduced intrinsic delay at higher temperatures make the device an great option for ultra-low-power and high switching speed applications. Additionally, the proposed device performs better in terms of linearity at greater temperatures.

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