Lithium molybdate disks were fabricated by moistening watersoluble Li 2 MoO 4 powder with deionized water and compressing it under a pressure of 130 MPa. Disks were postprocessed at room temperature, at 120°C, and at 540°C, which is a common sintering temperature for Li 2 MoO 4 . Regardless of the postprocessing temperature, densities as high as 87%-93% of the theoretical value were achieved. The X-ray diffraction patterns of processed disks were all the same with no signs of hydrates or constitutional water. The samples also exhibited very similar microstructures and microwave dielectric properties with a relative permittivity of 4.6-5.2 and a Q 3 f value of 10 200-18 500 at 9.6 GHz, depending on the postprocessing temperature.
A new glass-free low temperature sinterable CuMoO 4 ceramic was prepared by a solid state ceramic route. The structural, microstructural, electron dispersive spectrum, and X-ray photoelectron spectroscopy analysis revealed the quality of the material synthesized. The CuMoO 4 ceramic sintered at 650 °C exhibits densification of 96% and low coefficient of thermal expansion (CTE) of 4.6 ppm/°C in the temperature range of 25−500 °C. It has relative permittivity (ε r ) of 7.9, quality factor (Qf) of 53 000 GHz, and temperature coefficient of resonant frequency (τ f ) of −36 ppm/°C (25−85 °C) at 12.7 GHz. The sintered ceramic also shows ε r of 11 and low dielectric loss (tan δ) of 2.7 × 10 −4 at the frequency of 1 MHz. The full width half-maximum (fwhm) of A 1g Raman mode of CuMoO 4 ceramic at different sintering temperatures correlate well with the Qf values. The low sintering temperature, low relative permittivity, high-quality factor, and matching coefficient of thermal expansion to that of Si make CuMoO 4 a suitable candidate for ultralow temperature cofired ceramic (ULTCC) applications.
Dielectric properties of lithium molybdate disks fabricated by moistening water-soluble Li 2 MoO 4 powder, compressing it, and postprocessing the samples at 120°C, were improved by the optimization of powder particle size, sample pressing pressure, and postprocessing time. It appeared that the postprocessing temperature of the Li 2 MoO 4 ceramics could be chosen so as to be applicable to the associated integrated materials as long as the postprocessing time was adequately adjusted to ensure the removal of the residual water. In addition, the dielectric properties of Li 2 MoO 4 ceramic were modified with an inclusion of suitable additives. For example, at 1 GHz the relative permittivity of Li 2 MoO 4 disks fabricated at room temperature and postprocessed at 120°C was increased from 6.4 to 8.8 with an addition of 10 vol% of rutile TiO 2 and to 9.7 with an addition of 10 vol% of BaTiO 3 . At the same time the loss tangent value increased from 0.0006 to 0.0014 and to 0.011, respectively.
A new
glass with ultralow glass transition temperature based on 10Li2O–10Na2O–20K2O–60MoO3 (LNKM) has been developed by conventional glass melting and
quenching process. The glass has ultralow glass transition and melting
temperatures being 198 and 350 °C respectively. The glass exhibits
a coefficient of thermal expansion of 17 ppm/°C in the temperature
range of 25–300 °C. X-ray diffraction and Raman spectroscopic
studies indicate that the glass is partially crystallized. The chemical
and elemental composition of the glass is confirmed by X-ray photoelectron
spectroscopy. The glass pellet heat treated at 300 °C has a relative
permittivity of 5.07 and dielectric loss tangent of 0.006 at 1 MHz.
At 9.97 GHz, it shows a relative permittivity of 4.85 and dielectric
loss tangent of 0.0009. The temperature dependence of the relative
permittivity at 1 MHz and 9.97 GHz of the glass is 307 ppm/°C
(temperature range 20–100 °C) and 291 ppm/°C (temperature
range 25–85 °C), respectively.
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