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The effects of Cu diffusion in Cu/TiN/SiO2/Si structures have been evaluated by capacitance–voltage (C–V) measurements. The capacitors were annealed at temperatures between 500°C and 900°C for 1h and were stressed at 250°C for 1 h with positive or negative electric fields of 0.4–1.0 MV/cm. High frequency C–V characteristics of the annealed capacitors were measured before and after bias temperature stress treatment. The device failure due to Cu diffusing into Si substrate was not observed to occur by annealing of up to 700°C for 1 h.

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