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Four different approaches to develop materials for high energy density and high voltage (1OkV) capacitors are presented: 1) diamond-like carbon films, 2) chemically vapor deposited diamonds films, 3) ULTEMB polyetherimide films, and 4) computer-modeled modified polyetherimide films. Following a brief state-of-the art discussion, the status of the work on these materials is presented, which includes measurements of resistivity, dielectric constant and loss, and breakdown strength. The results are very encouraging and suggest that energy densities of 4-15 J/cm3 are possible.I NTR 0 DUCTI 0 N High energy delivery systems, such as high power lasers, require large amounts of energy to drive them. In stationary systems this can. be accommodated by power supplies of large physical size. However for mobile devices the energy sources must be compact. An essential part of any power supply is the energy storage device, usually a capacitor or battery. Mobile applications generally favor capacitors where high energy density is necessary in order to minimize the size of the overall power supply: devices rated at tens of J/g are desirable. Such energy densities are an order of magnitude greater than current state of the art technology. Recently, we embarked on a program for the US Army focused on materials development for high energy density capacitors of tens of J/g, lOkV rating and capable of 1Hz repetition rate. This paper summarizes of our approach to the problem and the status of the work. A state-of-the art survey is kept brief since good reviews of the state-of-the art exist [ 1-31 &+te-of-the Art Materials for capacitor applications can be placed in three general categories: 1) ceramic, e.g. Ta2O5, BaTiOj, 2) electrolytic and 3) polymeric, the latter with and without impregnating high dielecmc constant fluids. Electrolytic systems are characterized by large capacitances, and high energy density has been achieved [4]. However, they do not have the desired bipolar character, and their voltage ratings and resistivities are too low for high voltage applications [ 11. Ceramic materials, on the other hand, have a high dielectric constant and relatively high breakdown strength. Thus, a material like Ta2O5 which has a dielectric constant of 27 and a thin film breakdown strength of 4 X 106 V/cm [2] would have an energy density of 19 J/cm3. However, the best quality Ti3205 films are those electrolytically formed [2], and these are not fully bipolar. Ferromagnetic materials such as BaTi03 have the additional problem that the dielectric constant changes with electric field strength and temperature, with a particularly severe drop at the Curie temperature [5]. Ceramic type materials also have two other problems, namely their inherent brittleness and great difficulty in making defect-free large areas [6]. The latter problem is compounded by the fact that ceramics are not "clearable" as are polymeric materials, so that the defect problem cannot be remedied. Thus, electrical stresses such as are needed for obtaining high energy densiti...

Having successfully developed high volume manufacturing (HVM) processes for the 0x nm node, the semiconductor industry is now engaged in developing the next advanced node. This 0xnm node development is being accomplished by a combination of shrinking 0x nm dimensions, introducing new materials and films and consequently new lithography, dry etch and wet clean processes for the new node. One of the major challenges is developing processes, including BEOL Cleans Steps, to successfully and reliably expose the MOL metal contact during the first metal line formation without degrading the contact itself. One such compatible method/clean is discussed in this study.