Scatterometry is a novel optical metrology that has received considerable attention in the silicon industry in the past few years. Based on the analysis of light scattered from a periodic sample, scatterometry technology can be thought of as consisting of two parts known as the forward problem and the inverse problem. In the forward problem, a scatterometer "signature" is measured. The signature is simply the measured optical response of the scattering features to some incident illumination, like laser light. In the inverse problem, the signature is analyzed in order to determine the parameters (such as linewidth, thickness, profile, etc) of the scattering features. Typically a rigorous electrodynamic model is used in the solution to the inverse problem, but due to the complexity of the model there is no direct analytic solution. Instead, a variety of numerical methods to solve the inverse problem have been proposed and utilized.The earliest widely used method of solution to the inverse problem involved the generation of a "library" of scatter signatures corresponding to discrete parameter combinations of the structure being measured. Once the library was generated, it was then searched in order to determine the best match to the measured signature. The parameters of the best match were then reported as the parameters of the measured signature. As the technology matured, other methods such as model optimization techniques also emerged. In fact, a variety of alternate techniques have been explored and reported, but a general study comparing the results (and hence the strengths and weaknesses) of the various techniques has yet to be performed.In this research, we shall report results from using several different solutions to the inverse problem on two applications (patterned resist and etched poly). The solution methods shall include the classic library search method as well as three common optimization methods. The results will show that each technique has strengths and weaknesses. For example, the library search methods are generally the most robust but also the most time consuming, and the optimization methods, while fast, are prone to reporting a local but not global minima.

Maintaining dimensional control and adequate throughput during the etching of submicron features requires plasma etch tools that operate at low pressures and high densities, such as inductively coupled plasmas (ICPs). Unfortunately, in this regime, it has proven difficult to achieve a stable, reproducible chemistry for selective oxide etching of contacts and vias. In particular, it is difficult to control the passivating polymer film which provides etching selectivity to silicon, nitride, and photoresist. As a first step toward sorting out the complicated oxide etching chemistry, we have measured and modeled the kinetics of the polymer film deposition in an ICP reactor for C2F6/H2 and CHF3 chemistries. Using a unique application of statistical design of experiments, we have explored the pressure range of 3–15 mTorr, power range of 300–2000 W, residence times from 0.5 to 1.0 s, and magnetic field from 0 to 24 G. Polymer deposition rates on a bare Si wafer are measured using a laser interferometer. The concentration of fluorocarbon radicals, CF, CF2, and CF3, are measured in the plasma using wavelength modulated infrared diode laser absorption spectroscopy. Additional measurements include actinometric F atom density and ion saturation current. These measurements are analyzed in terms of a polymer deposition model and the important physical phenomena are inferred. Significantly, we find a unique polymer deposition mechanism over the entire range of tool parameters including direct deposition of CF and ion-assisted deposition of CF2.

The ability to accurately, quickly and automatically fingerprint the lenses of advanced lithography scanners has always been a dream for lithographers. This is truly necessary to understand error sources of ACLV, especially when the optical lithography is pushed into 130 nm regimes and beyond. This dream has become a reality at Texas Instruments with the help of scatterometry.This paper describes the development and characterization of the scatterometer based scanner lens testing technique (ScatterLith) and its application in 193 nm and 248 nm scanner lens fingerprinting. The entire procedure includes a full field exposure through focus in a micro stepping mode, scatterometer measurement of focus matrix, image field analysis and mapping of lens curvature, astigmatism, spherical aberration, line-through pitch analysis and ACLV analysis (i.e. across chip line width variation). ACLV has been directly correlated with image field deviation, lens aberration and illumination source errors. Examples are given to illustrate its applications in accurate focus monitoring with enhanced capability of dynamic image field and lens signature mapping for the latest ArF and KrF scanners used in manufacturing environment for 130nm node and beyond. Analysis of CD variation across a full scanner field is done through a step-bystep image field correction procedure. ACLV contribution of each image field error can be quantified separately. The final across slit CD signature is further analyzed against possible errors from illumination uniformity, illumination pupil fill, and higher order projection lens aberrations.High accuracy and short cycle time make this new technique a very effective tool for in-line real time monitoring and scanner qualification. Its fingerprinting capability also provides lithography engineers a comprehensive understanding of scanner performance for CD control and tool matching. Its extendibility to 90nm and beyond is particularly attractive for future development and manufacturing requirements.

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