We report on the modification of the g-factor by an in-plane electric field in an In0.031Ga0.969As epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to independently determine the g-factor and the spin-orbit fields. The g-factor increases from −0.4473 ± 0.0001 at 0 V/cm to −0.4419 ± 0.0001 at 25 V/cm applied along the [110] crystal axis. In addition, spatially-resolved spin measurements show a g-factor dependence on diffusive velocity. The change in g-factor with electric field can have a large effect on the determination of the internal spin-orbit and nuclear fields from Larmor precession frequency measurements.

Optical pump-probe techniques are used to generate and measure electron spin polarization in a gallium arsenide epilayer in which the electron spin coherence time exceeds the mode-locked laser repetition period. Resonant spin amplification occurs at magnetic fields at which the electron spin polarization excited by successive laser pulses add constructively. Measurements of Kerr rotation as a function of applied magnetic field reveal nuclear spin polarization that aligns either with or against the external magnetic field depending on whether the applied magnetic field is being decreased or increased. Furthermore, the nuclear spin polarization magnitude varies in proportion to the perpendicular net electron spin polarization as the latter changes due to resonant spin amplification and other causes. We also report an experimental technique that reveals a minutes-long memory of precise field history in the electron-nuclear spin system.