The diffusion of boron in MoSi2 films has been studied. The diffusion is determined by a combination of two factors: the low diffusivity in the bulk of grains and the much higher diffusivity in the grain boundaries. The diffusivity in the bulk of grains was 1×10−14 cm2/s and 8×10−13 cm2/s for furnace annealing at 950 °C and halogen lamp annealing at 1060 °C, respectively. The diffusivity in the grain boundaries was over two orders of magnitude higher than that in the bulk of grains. High-temperature annealing of MoSi2 films reduce the solubility and diffusivity of boron in the films because of grain growth.

The properties of Si‐rich W silicide films on P‐doped poly‐Si (W polycide) were investigated with respect to rapid anneal with halogen lamps. The outdiffusion of P, the W silicide film compositions, and the sheet resistivities were monitored. An 850°C, 6s halogen lamp annealing (HLA) caused the outdiffusion of P from the poly‐Si layer and began to eliminate excess Si in W silicide film. More Si atoms were eliminated as the HLA temperature was increased. A HLA at about 1200°C for 6s eliminated the excess Si and formed homogeneous stoichiometric W silicide with a smooth surface. The resistivity after a high temperature anneal was about 45 μΩ‐cm and it was independent of the as‐deposited W silicide film compositions. The P diffusivity in W silicide is reduced after a high temperature anneal. After a 1200°C, 6s HLA, P atoms contained in W silicide film were eliminated and the P outdiffusion from the poly‐Si was almost the same as that of 1025°C, 6s HLA. The P outdiffusion was much smaller than that of 900°C, 20 min furnace annealing (FA). Rapid annealing can reduce the sheet resistivity, and eliminate the excess Si and the P in the W silicide film with a lttle P outdiffusion from the poly‐Si layer. From the viewpoint of the surface morphology, HLA is superior to FA in order to get the same sheet resistivity of W polycide films.