Abstract-A new technique to de-embed the contributions of parasitic structures from transmission line measurements is presented and applied to microstrip lines fabricated in 90-and 130-nm RF-CMOS technologies. De-embedded measurements are used to extract characteristic impedance, attenuation constant, group delay, and effective permittivity. The effective thickness of the ground plane is demonstrated to be as important as the thickness of the top metal layer in minimizing interconnect loss. Furthermore, it is confirmed that metal area densities as low as 65% are adequate for the ground plane of microstrip lines.

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A fully integrated 802.11ad/WiGig compliant 60 GHz transceiver is presented in a 130 nm SiGe BiCMOS technology. Encompassing an area of 2.3 mm 2.16 mm 4.97 mm , the transceiver covers the entire 60 GHz band, from 57 to 66 GHz. Within this span, the RX NF, TX OP1dB, and PLL RMS jitter is better than 5.5 dB, 13.5 dBm, and 7 , respectively. The transceiver is packaged in 1) a system-in-package substrate with industry standard WR-15 transition providing an approximate 1 dB insertion loss, and 2) a cost-effective 7 7 mm organic BGA package with integrated transmit and receive antennas providing 8 dBi gain. In system-level testing, the transceiver is fully compliant with all TX EVM and RX sensitivity requirements of the WiGig standard up to the top-rate 16-QAM operating mode and across all standard channel frequencies. Link testing over the air with the antenna-integrated package shows a range of 5.9 m at 4.6 Gbps and over 20 m at 2.5 Gbps. This system achieves the highest performance 802.11ad/WiGig compliant wireless links of any reported single-element transceiver.