Low-curvature and large-diameter GaN wafers are in high demand for the development of GaN-based electronic devices. Recently, we have proposed the coalescence growth of GaN by the Na-flux method and demonstrated the possibility of enlarging the diameter of high-quality GaN crystals. In the present study, 2 in. GaN wafers with a radius of curvature larger than 100 m were successfully produced by the Na-flux coalescence growth technique. FWHMs of the 002 and 102 GaN X-ray rocking curves were below 30.6 arcsec, and the dislocation density was less than the order of 102 cm−2 for the entire area of the wafer.

A new method for selective crystallization of the metastable phase (form II) of acetaminophen is described. To obtain form II, we prepared a highly supersaturated solution (σI = 3.7) and then applied ultrasonic irradiation at different frequencies. Without ultrasonic irradiation, spontaneous crystallization did not occur within one month in the highly supersaturated condition (σI = 3.7). When ultrasonic irradiation at 28 kHz was applied, form II preferentially crystallized. Therefore, we conclude that ultrasonic irradiation can be an effective technique for selectively crystallizing the metastable phase.

High-throughput protein X-ray crystallography offers a significant opportunity to facilitate drug discovery. The most reliable approach is to determine the three-dimensional structure of the protein-ligand complex by soaking the ligand in apo crystals. However, protein apo crystals produced by conventional crystallization in a solution are fatally damaged by osmotic shock during soaking. To overcome this difficulty, we present a novel technique for growing protein crystals in a high-concentration hydrogel that is completely gellified and exhibits high strength. This technique allowed us essentially to increase the mechanical stability of the crystals, preventing serious damage to the crystals caused by osmotic shock. Thus, this method may accelerate structure-based drug discoveries.

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