Zinc selenide (ZnSe) thin films were deposited on to chemically and ultrasonically cleaned  glass substrates at different substrate temperatures from room temperature to 200°C keeping the  thickness fixed at 300 nm by using thermal evaporation method in vacuum. The structural properties of the films were ascertained by X-ray diffraction (XRD) method utilizing a  diffractometer. The optical properties were measured in the photon wavelength ranging between 300 and 2500 nm by using a UV-VIS-NIR spectrophotometer. The XRD patterns reveal that the  films were polycrystalline in nature exhibiting f.c.c zincblende structure with average lattice parameter, a = 5.6873Å. The grain size, strain and dislocation densities of the films have bee calculated. The optical transmittance and reflectance were utilized to compute the absorption  coefficient, band gap energy and refractive index of the films. The band gap energy of the films  was extracted from the absorption spectra. The direct band gap energy of the films slightly increases with substrate temperature.DOI: http://dx.doi.org/10.3329/jbas.v36i2.12969Journal of Bangladesh Academy of Sciences, Vol. 36, No. 2, 233-240, 2012

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