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Oxide ion conduction mechanism was clarified by Rietveld and MEM analysis for both RE 9.33 (SiO 4 ) 6 O 2 and Sr 2 RE 8 (SiO 4 ) 6 O 2 (RE = La and Nd) in high purity using neutron powder diffraction data collected at room temperature. All compounds had an apatite type structure in space group P6 3 /m. There was neither site splitting nor interstitial site of oxide ion. RE 9.33 (SiO 4 ) 6 O 2 had cation vacancies only at 4f site. In Sr 2 RE 8 (SiO 4 ) 6 O 2 , the 4f sites were fully occupied by strontium and rare earth with a molar ratio of 1:1. Oxide ion at hexagonal channel site had large displacement along c-axis in RE 9.33 (SiO 4 ) 6 O 2 . The large displacement is induced by cooperative rotation of SiO 4 tetrahedra around rare earth in 4f site through oxide ion polyhedra around another rare earth in 6h site. The displacement, enhanced by a vacancy in the 4f site, is directly related to the oxide ion conduction in RE 9.33 (SiO 4 ) 6 O 2 .2

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Lithium-ion conductive Li6PS5Br is prepared using ultrasonication of Li2S, P2S5 and LiBr in ethyl propionate-ethanol solution and subsequent heating at 453 K. The main phase of the synthesized product is Li6PS5Br and its lithium ion conductivity is 3.4 × 10 −5 S cm −1 at room temperature. The cathode composite of LiCo1/3Ni1/3Mn1/3O2, Li6PS5Br and vapor grown carbon fiber (VGCF) is prepared via ultrasonication of the Li6PS5Br precursor solution containing LiCo1/3Ni1/3Mn1/3O2 and VGCF, and the all-solid-state lithium battery using this cathode composite is fabricated. The cell exhibits the discharge capacity of 109 mAh g-1 for the first cycle and its capacity of 87 mAh g-1 after 10 cycles.

Electron-beam induced recrystallization of irradiation-induced amorphous Sr2Nd8(SiO4)6O2 is investigated in situ using transmission electron microscopy with 200keV electrons at room temperature. Epitaxial recrystallization is observed from both the amorphous/crystalline interface and the surface, and the recrystallization is more pronounced with increasing electron-beam flux. Since the temperature increase induced by electron-beam irradiation is estimated to be less than 7K and maximum energies transferred to target atoms are below the displacement energies, ionization-induced processes are considered to be the primary mechanisms for the solid-phase epitaxial recrystallization observed in the present study.