Multilayers of hydrogenated ultrathin (3 nm) amorphous a-Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM) to check the influence of annealing on their structural stability. The annealed multilayers exhibit surface and bulk degradation with formation of bumps and craters whose density and size increase with increasing hydrogen content and/or annealing temperature and time. Bumps are due to the formation of H2 bubbles in the multilayer. The craters are bumps blown up very likely because of too high a gas pressure inside. The release of H from its bonds to Si and Ge occurs within cavities very likely present in the samples. The necessary energy is supplied by the heat treatment and by the recombination of thermally generated carriers. Results by energy filtered TEM on the interdiffusion of Si and Ge upon annealing are also presented

Gradient a-Si1−xGex layers have been deposited by ”one-sample concept” combinatorial direct current (DC) magnetron sputtering onto one-inch-long Si slabs. Characterizations by electron microscopy, ion beam analysis and ellipsometry show that the layers are amorphous with a uniform thickness, small roughness and compositions from x = 0 to x = 1 changing linearly with the lateral position. By focused-beam mapping ellipsometry, we show that the optical constants also vary linearly with the lateral position, implying that the optical constants are linear functions of the composition. Both the refractive index and the extinction coefficient can be varied in a broad range for a large spectral region. The precise control and the knowledge of layer properties as a function of composition is of primary importance in many applications from solar cells to sensors.

Al2O3 (5 nm)/Si (bulk) sample was subjected to irradiation of 5 keV electrons at room temperature, in a vacuum chamber (pressure 1 × 10−9 mbar) and formation of amorphous SiO2 around the interface was observed. The oxygen for the silicon dioxide growth was provided by the electron bombardment induced bond breaking in Al2O3 and the subsequent production of neutral and/or charged oxygen. The amorphous SiO2 rich layer has grown into the Al2O3 layer showing that oxygen as well as silicon transport occurred during irradiation at room temperature. We propose that both transports are mediated by local electric field and charged and/or uncharged defects created by the electron irradiation. The direct modification of metal oxide/silicon interface by electron-beam irradiation is a promising method of accomplishing direct write electron-beam lithography at buried interfaces.