Graphene, an atomically thin material, has unique electrical, mechanical, and optical properties that can enhance the performance of thin film-based flexible and transparent devices, including gas sensors. Graphene synthesized on a metallic catalyst must first be transferred onto a target substrate using wet or dry transfer processes; however, the graphene surface is susceptible to chemical modification and mechanical damage during the transfer. Defects on the graphene surface deteriorate its excellent intrinsic properties, thus reducing device performance. In this study, the surface properties of transferred graphene were investigated according to the transfer method (wet vs. dry) and characterized using atomic force microscopy, Raman spectroscopy, and contact angle measurements. After the wet transfer process, the surface properties of graphene exhibited tendencies similar to the poly(methyl methacrylate) residue remaining after solvent etching. The dry-transferred graphene revealed a surface closer to that of pristine graphene, regardless of substrates. These results provide insight into the utilization of wet and dry transfer processes for various graphene applications.

Adhesion between a stamp with an elastomeric layer and various devices or substrates is crucial to successfully fabricate flexible electronics using a transfer process. Although various transfer processes using stamps with different adhesion strengths have been suggested, the controllable range of adhesion is still limited to a narrow range. To precisely transfer devices onto selected substrates, however, the difference in adhesion between the picking and placing processes should be large enough to achieve a high yield. Herein, we report a simple way to extend the controllable adhesion range of stamps, which can be achieved by adjusting the thickness of the elastomeric layer and the separation velocity. The adhesion strength increased with decreasing layer thickness on the stamp due to a magnification of the confinement and rate-dependent effects on the adhesion. This enabled the controllable range of the adhesion strength for a 15 μm-thick elastomeric layer to be extended up to 12 times that of the bulk under the same separation conditions. The strategy of designing stamps using simple adhesion tests is also introduced, and the reversible transfer of thin Si chips was successfully demonstrated. Tuning and optimizing the adhesion strength of a stamp according to the design process suggested here can be applied to various materials for the selective transfer and replacement of individual devices.

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