A generalized conceptual framework for regional carrying capacity evaluation along with its implementation approaches is introduced in this article, demonstrated by the case study in the Yangtze River Delta region, China. Following the data preprocessing, assimilative capacity, supportive capacity, and loading, the three essential aspects of regional carrying capacity, have been evaluated by principal components analysis and/or ecological footprint method. In terms of the characteristics of the results, sustainability criteria are established and used to determine the developmental states from 1997 to 2005 in the study area. Future states from 2006 to 2015 are predicted by a modified cellular automata model, into which an artificial neural network is incorporated to fit the transition rule. As revealed from the results of evaluation and prediction, the overall developmental states are worsening. For the sake of the sustainable development in this region, more attention should be paid to these results.

Emulsion gels, also known as gelled emulsions or emulgels, have garnered great attention both in fundamental research and practical applications due to their superior stability, tunable morphology and microstructure, and...

Flexible radio frequency (RF) transistors play an important role in the fast-growing wearable smart sensors for data communication. However, the scaling capability and high-speed performance of the flexible transistor are far below the counterparts on rigid substrates, impeding the gigahertz high-speed applications. Here, we address the scaling and performance bottlenecks in flexible transistors by demonstrating natively flexible RF indium tin oxide transistors with deeply scaled 15-nm-long channel, capable of operating in the 10-GHz frequency range. The record-high cutoff frequency of 11.8 GHz and maximum oscillation frequency of 15 GHz can rival those on rigid substrates. Furthermore, the robustness of flexible RF transistors was examined, capable of enduring heavy-duty 10,000 bending cycles at 1-mm radius and extreme thermal stress from cryogenic temperature of 4.3 K and high temperature of 380 K.