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Titanium nitride films obtained by chemical vapor deposition with TiC14, N2, and H2 as gas sources at ambient pressure have been examined in this study. The results reveal that the deposition rate increases with increasing H2 and N~ partial pressures but has a maximum value with TiC14 partial pressure. The Arrhenius plots show that the transition temperature from surface limited to diffusion limited is greatly influenced by H~, N2, and TIC14 partial pressures. The film microstructure was characterized by scanning electron microscopy (SEM) and x-ray diffractign (XRD). It is found that the change of topography and microstructure of TiN films responds to deposition temperature and gas concentration used. The diffusion rate of as-deposited atoms and the total surface energy are considered as the determinant factors for the change. The growth texture of TiN films was indentified to be <422> at lower deposition temperature and <200> at high temperature. The mechanisms for texture formation are discussed.

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