Heat transport in polymer nanocomposites reinforced with graphite nanoplatelets (GNPs) is studied using high-precision thermal conductivity measurements. The resistance to heat conduction across interfaces between GNPs and the polymer matrix has a strong effect on energy transport in the nanocomposites. The thermal conductivity is observed to increase when GNPs are pretreated with nitric acid to improve interfacial bonding. The improvement in the thermal conductivity, however, is much smaller than the corresponding improvement in mechanical properties. The thermal interface resistance extracted from the present thermal conductivity data is comparable to that obtained from the previously reported data on carbon nanotube suspensions.

We report a theoretical study of heat conduction across metal-dielectric interfaces in devices and structures of practical interest. At cryogenic temperatures, the thermal interface resistance between electrodes and a substrate is responsible for substantial reduction in the maximum permissible peak power in Josephson junctions. The thermal interface resistance is much smaller at elevated temperatures but it still plays a critical role in nanoscale devices and structures, especially nanolaminates that consist of alternating metal and dielectric layers. A theoretical model is developed to elucidate the impact of spatial nonequilibrium between electrons and phonons on heat conduction across nanolaminates. The diffuse mismatch model is found to provide reasonable estimates of the intrinsic thermal interface resistance near room temperature as well as at cryogenic temperatures.

The influence of SiO2 and Si3N4 dielectric matrices on the structural, phonon, luminescence and thermal properties of Ge quantum dots (QDs) has been experimentally investigated. Compared with the case of QDs in SiO2 layers, Si3N4 matrix imposes large interfacial surface energy on QDs and enhances their Ostwald ripening rate, appearing to be conducive for an improvement in crystallinity and a morphology change to a more perfectly spherical shape of Ge QDs. Quantum confinement induced electronic structure modulation for Ge QDs is observed to be strongly influenced not only by the QD size but also by the embedded matrix. Both matrix and surface effects offer additional mechanisms to QD itself for controlling the optical and thermal properties of the QDs.

Nanoscale heat conduction across tunnel junctions prepared through natural oxidation of metal electrodes is experimentally studied. The thermal resistance of AlOx tunnel barriers increases linearly with barrier thickness, which is consistent with the prevailing theory of heat conduction in highly disordered materials. Heat conduction across tunnel junctions is strongly impeded by finite thermal resistance at interfaces between barrier and electrode layers, which can be exploited to create superior thermal barrier coatings. The thermal conductivity of nanolaminates consisting of a series of Ta∕TaOx tunnel junctions is determined to be well below the minimum thermal conductivity limit.

GaN-on-sapphire structure with a Ga2O3 sacrificial layer was employed for the chemical lift-off process application. The (¯201) β-oriented Ga2O3 thin film was first deposited on the c-plane sapphire substrate using pulsed laser deposition, followed by the GaN growth via metalorganic vapor phase epitaxy under N2 and H2 environment in sequence. From the transmission-electron-microscopy observation, the orientation relationship between GaN and β-Ga2O3 was identified as GaN[11¯20]_Ga2O3[010]. A GaN epilayer with an electroplated copper substrate was demonstrated using a chemical lift-off process where the Ga2O3 sacrificial layer can be laterally etched out with a hydrofluoric solution