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We previously developed a semiconductor optical amplifier (SOA) assisted extended reach electroabsorption modulator integrated distributed feedback (EADFB) laser (AXEL) to increase the optical modulation output power and a high-frequency integrated design based on the flip-chip interconnection technique (Hi-FIT) to obtain a high modulation bandwidth. We achieved a high-output power 224-Gbit/s 4-level pulse-amplitude-modulation (4-PAM) operation of a Hi-FIT AXEL module. In this paper, we developed a compact DC block circuit integrated into Hi-FIT AXEL module to decrease chippower consumption without increasing the sub-assembly size and degrading the modulation bandwidth. We designed a Hi-FIT AXEL sub-assembly, that include a flip-chip interconnection board with a DC block circuit that affects the modulation bandwidth. We achieved a 3-dB bandwidth of up to 64 GHz for this designed sub-assembly. The fabricated Hi-FIT AXEL module has a 3-dB bandwidth of more than 62 GHz and a flat frequency response up to 50 GHz. For the 224-Gbit/s 4-PAM operation, the fabricated Hi-FIT AXEL module has a chip-out average output power of +10.0 dBm with a transmitter eye-closure quaternary (TECQ) of 1.9 dB. The integrated compact DC block circuit can reduce chip power consumption by up to 17%.