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Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O5 were obtained, where the electrodes consist of materials with low to high work function (Φm,vac from 4.06 to 5.93 eV). Effective metal work functions were extracted to study the Fermi level pinning effect and to discuss the dominant conduction mechanism. An accurate band alignment between electrodes and Ta2O5 is obtained and can be used for RRAM electrode engineering and conduction mechanism study.

We have investigated mixtures of the (R) and (S) enantiomers of a chiral liquid crystal, (R)- or (S)-1-methylheptyl 3'-fluoro-4'-(3-fluoro-4-octadecyloxybenzoyloxy)tolane-4-carboxylate using high-resolution adiabatic scanning calorimetry. The pure (R) compound has a direct transition from the twist-grain-boundary to the blue phase without an intermediary chiral nematic phase. For the blue phases a different kind of phase behavior as a function of enantiomeric excess is observed, most probably related to the presence of a twist-grain-boundary-A instead of a chiral nematic phase below the blue phases. The general form of this phase diagram is compared with traditional blue-phase behavior. Furthermore a blue-phase-III-isotropic phase critical point, analoguous to that of a liquid-gas system, is observed, consistent with experimental and theoretical work recently published in this field. Finally, the effect of changing enantiomeric excess on the latent heats of the different first order phase transitions is measured and discussed.