Augmented reality (AR) is emerging as a next-generation interactive display that promotes the interaction between users, digital content, and the real world. Although micro-LED is regarded as the most promising light engine candidate for AR, its inherent Lambertian radiation characteristics and relatively broader emission spectrum result in low optical coupling efficiency and diffraction dispersion-related “rainbow” phenomenon when combined with a waveguide combiner. Here, we numerically and experimentally demonstrate resonant cavity (RC) micro-LEDs by incorporating SiO2/TiO2 distributed Bragg reflectors with chip sizes of 60, 100, and 150  μm. The device has a divergence angle of 78.7° and a narrow spectrum width of 6.8 nm, which is significantly lower than that of the controlled micro-LEDs. The reported GaN-based RC micro-LEDs have the potential to be used in the display panel for AR applications in a variety of scenarios, including AR glasses, and head up display for cars and airplanes.

In this work, we prepared ultra-long Si-doped β-Ga2O3 nanowires on annealed Al2O3-film/Si substrate by low-pressure chemical vapor deposition (LPCVD) assisted by Au as catalyst. The length of nanowires exceeds 300 μm and diameters range from ~30 to ~100 nm in one-dimensional structures. The nanowires show good crystal quality and exhibit (201) orientation, confirmed by transmission electron microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga2O3 nanowires has three obvious blue luminescence peaks at 398 nm (3.12 eV), 440 nm (2.82 eV), and 492 nm (2.51 eV). The electrical properties obtained from Si-doped β-Ga2O3 nanowires exhibit good conductivity. A metal-semiconductor-metal device is made by using Ti/Au as the electrode, and the device current reaches 200 pA at a bias voltage of 3 V. Our results show that ultra-long Si-doped β-Ga2O3 nanowires can be grown directly on the surface of Al2O3-film/Si substrates. These nanowires have a very high length-diameter ratio and good electrical properties. A possible mechanism for Si doping is also presented.

In this work, low frequency noise in β-Ga2O3 nanowire-based (NW) electronic devices is analyzed, which exhibits different behaviors as the device size scales down. The noise spectrum for the narrower NW (∼80 nm) is closer to 1/f characteristics, whereas it starts to show evident 1/f2 components as the NW size gets thicker (∼200 nm), giving clear signs of distinctive features for the bunch of traps at the NW interface or in the bulk. Our results show that 1/f noise in these NW electronic devices seems predominantly originated from an aggregated effect of the intricate trap states close to the β-Ga2O3 NW surface or interface with a wide range distribution, while finite groups of active deep traps play a critical role in contributing 1/f2components via generation-recombination or random telegraph signal processes. Notably, as the bias voltage increases, the 1/f2 components in the noise spectra get more overwhelming and would shift toward lower frequencies, suggesting that electric ionization effects would screen the shallow traps close to the surface or interface based on the Poole–Frenkel model. The Hooge's constants extracted from the 1/f noise component for these β-Ga2O3 NW-based devices fall in the range of 0.008–0.019, which are comparable to those of the best reported devices based on other wide bandgap semiconductor with nanoscale structures, including GaN, ZnO, and SnO2. This work may give hints of revealing the sophisticated dynamic behaviors of traps in the surface/volume β-Ga2O3 materials and electronic devices in the nanoscale by low frequency noises.