Phase shift epitaxy (PSE) is a dynamic thin film growth technique wherein constituent fluxes are pulsed with an adjustable phase shift. PSE enables the introduction of dopants during the optimum segment of the growth cycle. Eu-doped GaN films were grown with Ga and Eu shutters periodically opened and closed (with varying phase shift) while keeping N flux constant, so that the Ga and Eu coverage on surface during each cycle varies in a controlled way. The Eu concentration and photoluminescence (PL) efficiency are strongly influenced by the PSE parameters. Eu ions doped during high Ga coverage exhibit strong PL efficiency.

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