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C 4 F 8 -based, inductively coupled plasma (ICP) combined with dual-frequency capacitively coupled plasma (CCP) was used to etch 6H-SiC substrates for the synthesis of few-layer graphene-on-insulator (FLGOI) films. The Raman spectroscopy studies were used to measure the thickness of the FLG samples. The combination of high frequency CCP and ICP modes can facilitate the tuning of the C 4 F 8 discharge dissociation characteristics. A balance is struck between etching and deposition, leaving an ultra-thin C-rich overlaying film on the surface. After the layer is annealed at low temperature (920 8C), F atoms can be expelled leading to the reconstruction of the remainder material to form an FLG film. Considering the easy control of C 4 F 8 plasma, our work opens up a new avenue for achieving FLGOI films with high yield at low temperature.

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