A new technology for the fabrication of reliable solid‐state molecular devices using a graphene multilayer as the top electrode is introduced. Graphene‐electrode molecular devices were fabricated in high yield with good junction conductance. These devices also have excellent durabilities, thermal and operational stabilities, and device lifetimes.

Graphene is a promising next-generation conducting material with the potential to replace traditional electrode materials such as indium tin oxide in electrical and optical devices. It combines several advantageous characteristics including low sheet resistance, high optical transparency and excellent mechanical properties. Recent research has coincided with increased interest in the application of graphene as an electrode material in transistors, light-emitting diodes, solar cells and flexible devices. However, for more practical applications, the performance of devices should be further improved by the engineering of graphene films, such as through their synthesis, transfer and doping. This article reviews several applications of graphene films as electrodes in electrical and optical devices and discusses the essential requirements for applications of graphene films as electrodes.

This work demonstrates a large-scale batch fabrication of GaN light-emitting diodes (LEDs) with patterned multi-layer graphene (MLG) as transparent conducting electrodes. MLG films were synthesized using a chemical vapor deposition (CVD) technique on nickel films and showed typical CVD-synthesized MLG film properties, possessing a sheet resistance of [Formula: see text] with a transparency of more than 85% in the 400-800 nm wavelength range. The MLG was applied as the transparent conducting electrodes of GaN-based blue LEDs, and the light output performance was compared to that of conventional GaN LEDs with indium tin oxide electrodes. Our results present a potential development toward future practical application of graphene electrodes in optoelectronic devices.

Organic memory: Our three‐dimensionally (3D) stacked 8 × 8 cross‐bar array organic resistive memory devices showed non‐volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic‐based electronics with much increased cell density.

Organic nonvolatile memory devices fabricated on flexible substrates showed rewritable and nearly consistent switching characteristics, regardless of the bending circumstances. This stable memory performance with bending stress is a promising property for the practical memory devices in future flexible electronics.