We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.

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Organic memory: Our three‐dimensionally (3D) stacked 8 × 8 cross‐bar array organic resistive memory devices showed non‐volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic‐based electronics with much increased cell density.

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