In this paper, a free space based method for measurement of silicon dielectric constant is presented at W band frequencies. The dielectric constant of silicon is calculated using measured phase information of the transmitted signal (S21) through Silicon sheet of 500um thickness. Measured dielectric constant for silicon wafer has numerous fluctuations which come from multiple reflection and diffraction effect due to sharp edges.

This article presents the design steps and implementation of a W‐band ultra‐wideband low noise amplifier (LNA) for both automotive and imaging applications. Three amplifiers based on common‐emitter topology with different configurations are manufactured using IHP 0.13 µm SiGe BiCMOS 300/500 GHz (ft/fmax) SG13G2 technology. A three‐stage single‐ended structure is proposed for ultra‐wideband imaging purposes. As the results are analyzed, this 0.2 mm2 LNA can operate in a 25 GHz of measured 3‐dB bandwidth in W‐band with 21 dB peak gain and 4.9 dB average noise figure using 1.5 V supply voltage. It consumes 50 mW of power in the edge operation conditions and the output 1 dB compression point is found as −4 dBm. To the authors' knowledge, this chip achieves one of the best overall performances compared to other W‐band LNAs. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1274–1278, 2015

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