We have fabricated organic thin-film transistor (OTFT)-driven active matrix liquid crystal displays on flexible polymeric substrates. These small displays have 16×16 pixel polymer-dispersed liquid crystal arrays addressed by pentacene active layer OTFTs. The displays were fabricated using a low-temperature process (<110 °C) on flexible polyethylene naphthalate film and are operated as reflective active matrix displays.

We have fabricated and characterized analog and digital circuits using organic thin-film transistors on polyester film substrates. These are the first reported dynamic results for organic circuits fabricated on polyester substrates. The high-performance pentacene transistors yield circuits with the highest reported clock frequencies for organic circuits.

We have fabricated and demonstrated active-matrix liquid-crystal displays using organic thin-film transistors (OTFTs) on polyester substrates. This is the first reported demonstration of an OTFT active-matrix liquid-crystal display, and also the first demonstration of a TFT active-matrix liquid-crystal display of any type fabricated on a polyester substrate.

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Device applications for thin silicon epitaxy require sharp transition widths and uniform layers on wafers up to 200 mm diameter in production quantity. Uniform silicon epitaxy nominally 1 um thick deposited with transition widths of 0.2 – 0.3 µm over heavily doped buried layers using reduced pressure CVD technology are discussed. Both boron and arsenic buried layers can be accommodated in the 100 – 200 torr range. Thin selective epitaxy, with and without uniform polycrystalline silicon overgrowth on the oxide, is improved by reduced pressure deposition. Epitaxial lateral overgrowth is another technology based on thin epitaxy that is improved by reduced pressure CVD. Silicon-on-Sapphire requires very high growth rates at atmospheric pressure for very short times to achieve acceptable crystal quality. Some results for these thin epitaxy processes are reviewed.