GaN HEMT can operate at a high switching frequency because of its characteristics, but there are also related problems. This paper analyzes the negative effects of switching oscillations of GaN HEMT, introduces the design criteria of its driving circuit, and analyzes the causes of the Miller effect and gate ringing under the influence of high-frequency parasitic parameters. Then, the corresponding suppression strategies for the above two phenomena are given, and the design of the driving circuit is introduced. Finally, the validity and rationality of the designed driving circuit are verified by experiments.

A battery discharge regulator system based on the Superboost converter is presented, and the working principle of the Superboost converter is analyzed. In order to meet the developing requirements of high efficiency and high power density converters, GaN devices are applied to the Superboost circuit to increase the switching frequency of the circuit. Thanks to this, the weight and volume of the passive devices can be reduced, and the power density of the circuit can be increased. In high-frequency conditions, the device parameters of the circuit are designed, and the theoretical derivation of the circuit transfer function is carried out. Finally, simulation software is used to verify the rationality and feasibility of the design.